MMBT619 2a , 50v npn plastic encapsulated transistor elektronische bauelemente 20-feb-2012 rev. a page 1 of 2 http://www.secosgmbh.com/ any changes of specification will not be informed i ndividually. 1 base 2 emitter collector 3 rohs compliant product a suffix of -c specifies halogen & lead-free features low saturation voltage marking 619 package information absolute maximum ratings (t a =25 c unless otherwise specified) parameter symbol ratings unit collector to base voltage v cbo 50 v collector to emitter voltage v ceo 50 v emitter to base voltage v ebo 5 v collector current - continuous i c 2 a collector power dissipation p c 350 mw thermal resistance from junction to ambient r ja 357 c / w maximum power dissipation 1 p cm 625 mw thermal resistance from junction to ambient 1 r ja 200 c / w junction, storage temperature t j , t stg 150, -55~150 c note: 1. maximum power dissipation is calculated assuming that the device is mounted on a ceramic substrate measuring 15x15x0.6mm. package mpq leader size sot-23 3k 7 inch ref. millimeter ref. millimeter min. max. min. max. a 2.80 3.04 g 0.09 0.18 b 2.10 2.55 h 0.45 0.60 c 1.20 1.40 j 0.08 0.177 d 0.89 1.15 k 0.6 ref. e 1.78 2.04 l 0.89 1.02 f 0.30 0.50 sot-23 top view a l c b d g h j f k e 1 2 3 1 2 3
MMBT619 2a , 50v npn plastic encapsulated transistor elektronische bauelemente 20-feb-2012 rev. a page 2 of 2 http://www.secosgmbh.com/ any changes of specification will not be informed i ndividually. electrical characteristics (t a =25 c unless otherwise specified) parameter symbol min. typ. max. unit test conditions collector to base breakdown voltage v (br)cbo 50 - - v i c =100 a, i e =0 collector to emitter breakdown voltage 1 v (br)ceo 50 - - v i c =10ma, i b =0 emitter to base breakdown voltage v (br)ebo 5 - - v i e =100 a, i c =0 collector cut-off current i cbo - - 100 na v cb =40v, i e =0 emitter cut-off current i ebo - - 100 na v eb =4v, i c =0 dc current gain 2 h fe 200 - - v ce =2v, i c =10ma 300 - - v ce =2v, i c =200ma 200 - - v ce =2v, i c =1a 100 - - v ce =2v, i c =2a - 40 - v ce =2v, i c =6a collector to emitter saturation voltage 1 v ce(sat) - - 20 mv i c =100ma, i b =10ma - - 200 i c =1a, i b =10ma - - 220 i c =2a, i b =50ma base to emitter saturation voltage 1 v be(sat) - - 1 v i c =2a, i b =50ma base to emitter on voltage 1 v be(on) - - 1 v i c =2a, v ce =2v collector output capacitance c ob - - 20 pf v cb =10v, f=1mhz turn-on time t (on) - 170 - ns v cc =10v, i c =1a, i b1 = -i b2 =10ma turn-off time t (off) - 750 - ns transition frequency f t 100 - - mhz v ce =10v, i c =50ma, f=100mhz note: 1. pulse width Q 300 s, duty cycle Q 2.0%
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